Nonlinear Modeling and Verification of a Domestically Developed Gallium Nitride High-Electron-Mobility Transistor

COMPARISON OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS MODELING IN TWO AND THREE DIMENSIONS by

Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers

The ubiquitous network society is evolving at an accelerated pace using various mobile communication tools, especially mobile phones. The driving force behind such a rapid development of the network is the rise in requirements of various bandwidth sensitive user applications. This leads to a demand for large capacity mobile communications, with availability anytime, anywhere and with anything. ...

Modeling and Simulation of a Molecular Single-Electron Transistor

In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...

Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...